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| VN1304 VN1306 VN1310 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 40V 60V 100V RDS(ON) (max) 8.0 8.0 8.0 ID(ON) (min) 0.5A 0.5A 0.5A Order Number / Package TO-39 -- VN1306N2 -- TO-92 -- -- VN1310N3 7 Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. DGS SGD BVDSS BVDGS 20V -55C to +150C 300C TO-39 Case: DRAIN TO-92 Note: See Package Outline section for dimensions. 7-191 VN1304/VN1306/VN1310 Thermal Characteristics Package ID (continuous)* 0.4A 0.25A ID (pulsed) 1.4A 1.3A Power Dissipation @ TC = 25C 3.0W 1.0W C/W 41 125 jc C/W 125 170 ja IDR* 0.4A 0.25A IDRM 1.4A 1.3A TO-39 TO-92 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS Parameter Drain-to-Source Breakdown Voltage VN1310 VN1306 VN1304 VGS(th) VGS(th) IGSS IDSS Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 100 60 40 0.8 -3.9 2.4 -5.0 100 1 100 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current 0.25 0.50 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 120 27 13 3 2 2 2 2 1.0 350 35 15 5 5 5 6 5 1.3 V ns VGS = 0V, ISD = 0.5A VGS = 0V, ISD = 0.5A ns VDD = 25V ID = 500mA RGEN = 25 pF VGS = 0V, VDS = 25V f = 1 MHz 0.6 1.4 5.0 5.0 0.8 15 8.0 2 %/C m V mV/C nA A A VGS = VDS, ID = 1mA VGS = VDS, ID = 1mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA VDS = 25V, ID = 500mA V VGS = 0V, ID = 1mA Typ Max Unit Conditions A Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. VDD Switching Waveforms and Test Circuit 10V 90% INPUT 0V 10% t(ON) td(ON) VDD OUTPUT 0V 90% 90% tr t(OFF) td(OFF) tF D.U.T. 10% 10% INPUT PULSE GENERATOR Rgen RL OUTPUT 7-192 VN1304/VN1306/VN1310 Typical Performance Curves Output Characteristics 2.0 2.0 Saturation Characteristics 1.6 VGS = 10V 1.6 VGS = 10V ID (amperes) 1.2 8V ID (amperes) 1.2 8V 0.8 6V 0.8 6V 0.4 4V 0.4 4V 0 0 10 20 30 40 50 0 0 2 4 6 8 10 VDS (volts) Transconductance vs. Drain Current 0.5 2.5 VDS (volts) Power Dissipation vs. Ambient Temperature 7 VDS = 25V 0.4 2.0 GFS (siemens) TA = -55C TA = 25C 0.2 PD (watts) 0.3 1.5 TO-39 1.0 TA = 125C 0.1 0.5 TO-92 0 0 0.4 0.8 1.2 1.6 2.0 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 10 1.0 TA (C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 ID (amperes) 1.0 TO-92 (pulsed) TO-39 (DC) TO-39 (pulsed) TO-92 (DC) 0.1 0.6 TO-39 PD = 3.5W TC = 25C 0.4 0.2 TA = 25C .01 0.1 1.0 10 100 0 0.001 TO-92 P D = 1W T C = 25C 0.01 0.1 1 10 VDS (volts) tp (seconds) 7-193 VN1304/VN1306/VN1310 Typical Performance Curves BVDSS Variation with Temperature 15 1.1 12 On-Resistance vs. Drain Current VGS = 5V BVDSS (normalized) RDS(ON) (ohms) 9 1.0 6 VGS = 10V 3 0.9 0 -50 0 50 100 150 0 0.3 0.6 0.9 1.2 1.5 Tj (C) Transfer Characteristics 1.5 ID (amperes) V(th) and RDS Variation with Temperature 2.0 VDS = 25V 1.2 1.25 RDS(ON) @ 10V, 500mA 1.6 TA = -55C 25C 0.9 1.2 1.0 125C RDS(ON) @ 5V, 50mA 0.8 0.6 0.3 0.75 0 0 2 4 6 8 10 -50 0 50 100 150 0.4 0 VGS (volts) Capacitance vs. Drain-to-Source Voltage 50 10 Tj(C) Gate Drive Dynamic Characteristics VDS = 10V 8 f = 1MHz C (picofarads) VGS (volts) CISS 25 6 VDS = 40V 4 60 pF COSS 2 CRSS 0 0 10 20 30 40 0 0 25 pF 8 12 4 16 20 VDS (volts) QG (nanocoulombs) 7-194 RDS(ON) (normalized) VGS(th) (normalized) V(th) @ 1mA ID (amperes) |
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